6464

Application Calibrating non-volatile memory read thresholds
Matter Number US10998041B1 Reference Case 1 US10998041B1
Created 12/22/21, 12:00 AM Modified 12/22/21, 12:00 AM
Application Number

16869424

Paragraph Number

224

Content

In certain embodiments, a read scan circuit 1204 may apply a correlation factor directly to a current read level for a second memory state and thereby determine the second read level without testing or checking candidate read levels for a second read level window. For example, the read scan circuit 1204 may multiple the current read level by the correlation factor that represents a correlation between the first memory state and the second memory state. In such an embodiment, determining the second read level may be more efficient and may be made possible where the correlation between two memory states is strong enough to skip testing candidate read levels for a second read level window 1104.

Notes

Added by DJM 12 2021