Paragraph 221
Paragraph 221
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
221
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,461
Content
A volatile memory 1206 coupled to the read scan circuit 1204 may comprise a correlation data structure 1208 configured to store correlation factors for one or more and potentially each memory state for the set of memory cells. The correlation factors stored in the correlation data structure 1208 may represent correlations between memory states, and multiplying a candidate read level by the correlation factor may modify the candidate read level to account for the correlation.
Notes
Added by DJM 12 2021