16869424

Paragraph Number

220

The read scan circuit 1204 of the die controller 1202 may be configured to iteratively sense a set of memory cells using a first set of candidate read levels until a candidate read level activates a fewest number of memory cells in relation to other candidate read levels within the first set. The read scan circuit 1204 may then determine a first read level for a first memory state based on the candidate read level that activates the fewest number of memory cells.

Added by DJM 12 2021