Paragraph 220
Paragraph 220
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
220
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,460
Content
The read scan circuit 1204 of the die controller 1202 may be configured to iteratively sense a set of memory cells using a first set of candidate read levels until a candidate read level activates a fewest number of memory cells in relation to other candidate read levels within the first set. The read scan circuit 1204 may then determine a first read level for a first memory state based on the candidate read level that activates the fewest number of memory cells.
Notes
Added by DJM 12 2021