16869424
Paragraph Number219
6459
| Application | Calibrating non-volatile memory read thresholds | ||
|---|---|---|---|
| Matter Number | US10998041B1 | Reference Case 1 | US10998041B1 |
| Created | 12/22/21, 12:00 AM | Modified | 12/22/21, 12:00 AM |
Application Number
Content
The die controller 1202 may cooperate with the read/write circuits 208 to perform memory operations on these memory cells and may include a state machine 214 that provides chip-level control of memory operations. In one embodiment, the read scan circuit 1204 is configured to adjust one or more read levels between memory states. In one embodiment, the read scan circuit 1204 implements a valley search operation to determine whether or not to adjust read levels.
Notes
Added by DJM 12 2021