Paragraph 219
Paragraph 219
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
219
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,459
Content
The die controller 1202 may cooperate with the read/write circuits 208 to perform memory operations on these memory cells and may include a state machine 214 that provides chip-level control of memory operations. In one embodiment, the read scan circuit 1204 is configured to adjust one or more read levels between memory states. In one embodiment, the read scan circuit 1204 implements a valley search operation to determine whether or not to adjust read levels.
Notes
Added by DJM 12 2021