16869424

Paragraph Number

218

The non-volatile memory array 206 may be a three-dimensional memory array comprising a number of memory cells. These memory cells may be quad-level cells, such that each memory cell may store four bits of data, as described with regard to FIG. 4 and FIG. 5. The die controller 1202 may be configured to execute storage operations on the memory cells of the non-volatile memory array 206 (three-dimensional memory array).

Added by DJM 12 2021