Paragraph 218
Paragraph 218
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
218
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,458
Content
The non-volatile memory array 206 may be a three-dimensional memory array comprising a number of memory cells. These memory cells may be quad-level cells, such that each memory cell may store four bits of data, as described with regard to FIG. 4 and FIG. 5. The die controller 1202 may be configured to execute storage operations on the memory cells of the non-volatile memory array 206 (three-dimensional memory array).
Notes
Added by DJM 12 2021