Paragraph 213
Paragraph 213
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
213
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,453
Content
In one embodiment, suppose a correlation indicates a likelihood that a second candidate read level may be more optimal than a first candidate read level. In such an embodiment, a read scan operation may change a predefined order by skipping iteratively testing a first candidate read level in response to the second candidate read level activating the fewest number of memory cells in relation to other candidate read levels within the second read level window 1104.
Notes
Added by DJM 12 2021