16869424
Paragraph Number212
6452
| Application | Calibrating non-volatile memory read thresholds | ||
|---|---|---|---|
| Matter Number | US10998041B1 | Reference Case 1 | US10998041B1 |
| Created | 12/22/21, 12:00 AM | Modified | 12/22/21, 12:00 AM |
Application Number
Content
In one embodiment, a read scan operation may scan candidate read levels 1112 in a predefined order. For example, the predefined order may alternate between a high threshold voltage candidate read level and low threshold voltage candidate read level (e.g., #24', #26', #23', #27'). In one embodiment, applying a correlation factor to configure second read level window 1104 may include changing the predefined order to a new order based on the correlation factor. For example, suppose a correlation is a negative shift correlation (e.g., negative shift correlation 726). In one embodiment, the read scan operation may be configured to change the predefined order to leverage the negative shift correlation and so the changed order of candidate read levels may be #24', #23', #26', #27'', such that the lower threshold voltage candidates are examined before the higher threshold voltage candidates. In another example, if a correlation indicates a strong likelihood that a memory state may experience widening, the outermost candidates may be used first, and the scan may work its way inward.
Notes
Added by DJM 12 2021