6449

Application Calibrating non-volatile memory read thresholds
Matter Number US10998041B1 Reference Case 1 US10998041B1
Created 12/22/21, 12:00 AM Modified 12/22/21, 12:00 AM
Application Number

16869424

Paragraph Number

209

Content

The read scan operation may apply a determined correlation factor to the second read level window 1104 such that the correlation affects the candidate read levels 1112 of the second read level window 1104. For second read level window 1104, for example, the candidate read levels 1112 #23', #24', #25', #26', and #27', may be centered around a projected threshold voltage, e.g., #25' determined by using the a correlation factor between memory state C and memory state J or memory state C and memory state K, or memory state D and memory state J and memory state D and memory state K.

Notes

Added by DJM 12 2021