Paragraph 209
Paragraph 209
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
209
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,449
Content
The read scan operation may apply a determined correlation factor to the second read level window 1104 such that the correlation affects the candidate read levels 1112 of the second read level window 1104. For second read level window 1104, for example, the candidate read levels 1112 #23', #24', #25', #26', and #27', may be centered around a projected threshold voltage, e.g., #25' determined by using the a correlation factor between memory state C and memory state J or memory state C and memory state K, or memory state D and memory state J and memory state D and memory state K.
Notes
Added by DJM 12 2021