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Paragraph Number207
6447
| Application | Calibrating non-volatile memory read thresholds | ||
|---|---|---|---|
| Matter Number | US10998041B1 | Reference Case 1 | US10998041B1 |
| Created | 12/22/21, 12:00 AM | Modified | 12/22/21, 12:00 AM |
Application Number
Content
Next, the read scan operation scans a second read level window 1104. Scanning the configured second read level window 1104 for a second candidate read level may include determining a second candidate read level that activates the fewest number of memory cells in relation to the other candidate read levels 1112 within the second read level window 1104. Once the read scan operation determines an optimal read level D 1110 and optimal read level K 1114, the read scan operation configures a read operation to use optimal read level D 1110 and optimal read level K 1114.
Notes
Added by DJM 12 2021