16869424
Paragraph Number206
6446
| Application | Calibrating non-volatile memory read thresholds | ||
|---|---|---|---|
| Matter Number | US10998041B1 | Reference Case 1 | US10998041B1 |
| Created | 12/22/21, 12:00 AM | Modified | 12/22/21, 12:00 AM |
Application Number
Content
Once a read scan operation determines read level D 1110, the read scan operation may configure a second read level window 1104 based on a correlation between at least one of the two adjacent memory states 1108 (e.g., C or D) and one or more other adjacent memory states 1108 associated with the second read level window 1104 (e.g., J and K). Advantageously, in one embodiment, the correlation enables the second read level window 1104 to be smaller, e.g., include fewer candidate read levels 1112 than had a correlation not been used to configure the second read level window 1104.
Notes
Added by DJM 12 2021