Paragraph 206
Paragraph 206
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
206
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,446
Content
Once a read scan operation determines read level D 1110, the read scan operation may configure a second read level window 1104 based on a correlation between at least one of the two adjacent memory states 1108 (e.g., C or D) and one or more other adjacent memory states 1108 associated with the second read level window 1104 (e.g., J and K). Advantageously, in one embodiment, the correlation enables the second read level window 1104 to be smaller, e.g., include fewer candidate read levels 1112 than had a correlation not been used to configure the second read level window 1104.
Notes
Added by DJM 12 2021