16869424
Paragraph Number205
6445
| Application | Calibrating non-volatile memory read thresholds | ||
|---|---|---|---|
| Matter Number | US10998041B1 | Reference Case 1 | US10998041B1 |
| Created | 12/22/21, 12:00 AM | Modified | 12/22/21, 12:00 AM |
Application Number
Content
A read scan operation may scan read levels within first read level window 1102 checking for a first candidate read level, among candidate read levels 1106, that activates the fewest number of memory cells in relation to other candidate read levels 1106 within the first read level window 1102. This first read level window 1102 may be configured to test candidate read levels 1106 between adjacent memory states 1108, memory state C and memory state D to locate an optimal read level D 1110.
Notes
Added by DJM 12 2021