Paragraph 205
Paragraph 205
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
205
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,445
Content
A read scan operation may scan read levels within first read level window 1102 checking for a first candidate read level, among candidate read levels 1106, that activates the fewest number of memory cells in relation to other candidate read levels 1106 within the first read level window 1102. This first read level window 1102 may be configured to test candidate read levels 1106 between adjacent memory states 1108, memory state C and memory state D to locate an optimal read level D 1110.
Notes
Added by DJM 12 2021