Paragraph 199
Paragraph 199
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
199
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,439
Content
By way of example, suppose a starting memory state 902, memory state D, has been determined and a read scan operation is configured to leverage correlations between memory states in determining a read level for an ending memory state 904, memory state G. The read scan operation may consult shift correlation table 900 and locate the row for memory state D and read the value that intersects with the column corresponding to memory state G. The entry is a shift correlation factor 906 and indicates that when starting memory state 902 shifts then, based on a correlation, the ending memory state 904 shifts in an opposite direction, a negative correlation. The negative correlation is indicated by the negative value 150. In this example, the shift correlation factor 906 (e.g., -150 mV as illustrated) may indicate that memory state G experiences a negative shift of 150 mV (shifts down on average voltage by about -150 mV) with respect to memory state D. The read scan operation may leverage this correlation factor to optimize a scanning operation to determine an optimal read level for memory state G.
Notes
Added by DJM 12 2021