6414

Application Calibrating non-volatile memory read thresholds
Matter Number US10998041B1 Reference Case 1 US10998041B1
Created 12/22/21, 12:00 AM Modified 12/22/21, 12:00 AM
Application Number

16869424

Paragraph Number

174

Content

To address these changes, the read scan operation adjusts the read levels at the cell threshold voltage distribution curve boundaries. FIG. 7 illustrates a few example memory states in which the read level adjustment has been made. Curves illustrated in solid lines represent a current distribution and those illustrated in dashed lines represent what the cell threshold voltage distribution was in the past.

Notes

Added by DJM 12 2021