Paragraph 174
Paragraph 174
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
174
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,414
Content
To address these changes, the read scan operation adjusts the read levels at the cell threshold voltage distribution curve boundaries. FIG. 7 illustrates a few example memory states in which the read level adjustment has been made. Curves illustrated in solid lines represent a current distribution and those illustrated in dashed lines represent what the cell threshold voltage distribution was in the past.
Notes
Added by DJM 12 2021