Paragraph 171
Paragraph 171
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
171
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,411
Content
In addition, a BES read scan operation may test candidate read levels in a predefined order. For example, when checking for read level D 412, the predefined order of candidate read levels may be #10, then #13, then #14, then #8, then #9. This predefined order may be determined by a manufacturer based on a series of tests and research and development to understand which candidate read levels are most likely to result in the lowest bit error rate after the fewest number of iterations within the BES read scan operation.
Notes
Added by DJM 12 2021