Paragraph 158
Paragraph 158
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
158
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,398
Content
FIG. 6 includes read level window 602, read level window 604, read level window 606, and read level window 608, one for each read level A 406, read level D 412, read level F 416, and read level K 426, respectively. For each read level window, scanning window, a set of sets of candidate read levels 610 may be used. For example, threshold voltage levels #1-#7 may be the candidate read levels used across read level window 602 to determine an optimal placement for read level A 406, levels #8-14 for read level D 1110, levels #15-21 for read level F 416, and levels #22-28 for read level K 1114.
Notes
Added by DJM 12 2021