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Paragraph Number158
6398
| Application | Calibrating non-volatile memory read thresholds | ||
|---|---|---|---|
| Matter Number | US10998041B1 | Reference Case 1 | US10998041B1 |
| Created | 12/22/21, 12:00 AM | Modified | 12/22/21, 12:00 AM |
Application Number
Content
FIG. 6 includes read level window 602, read level window 604, read level window 606, and read level window 608, one for each read level A 406, read level D 412, read level F 416, and read level K 426, respectively. For each read level window, scanning window, a set of sets of candidate read levels 610 may be used. For example, threshold voltage levels #1-#7 may be the candidate read levels used across read level window 602 to determine an optimal placement for read level A 406, levels #8-14 for read level D 1110, levels #15-21 for read level F 416, and levels #22-28 for read level K 1114.
Notes
Added by DJM 12 2021