Paragraph 157
Paragraph 157
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
157
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,397
Content
In another embodiment comprise NAND memory cells, a read level window may comprise a set of threshold voltages between a low threshold voltage and a high threshold voltage, with each member of the set of candidate read levels within the read level window comprising a threshold voltage offset by one or more offset amounts from a default read level, such as a current read level. The offsets from the default read level may be both greater than and/or less than the default read level. A read level window may also be referred to as a "scanning" window.
Notes
Added by DJM 12 2021