Paragraph 151
Paragraph 151
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
151
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,391
Content
In one embodiment, at least one of the candidate read levels will produce an optimal result, result in the fewest number of bit errors when reading from one of the adjacent memory states. Such candidate read levels may be referred to as a target read level. A target read level is a read level that results in a smallest or fewest number of activated memory cells in relation to other candidate read levels that may be iteratively checked. In another embodiment, the target read level is a read level that results in a smallest or fewest number of bit errors or bit error rate or estimated bit error rate from a read set of memory cells in relation to other candidate read levels that may be iteratively checked.
Notes
Added by DJM 12 2021