Paragraph 150
Paragraph 150
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
150
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,390
Content
A candidate read level may comprise one of a plurality of read levels positioned generally between a majority of memory cells of cell threshold voltage distributions for two adjacent memory states. It is desirable that candidate read levels result in optimal performance when reading data from memory cells programmed to one of the two adjacent memory states.
Notes
Added by DJM 12 2021