16869424
Paragraph Number149
6389
| Application | Calibrating non-volatile memory read thresholds | ||
|---|---|---|---|
| Matter Number | US10998041B1 | Reference Case 1 | US10998041B1 |
| Created | 12/22/21, 12:00 AM | Modified | 12/22/21, 12:00 AM |
Application Number
Content
In still other embodiments, candidate read levels may be calculated based on results of one or more prior sense, and/or read operations (referred to herein as a "scan" or "scans"), that a read scan circuit may perform on a set of storage cells. For example, in one embodiment, the read scan circuit may compare results of a prior scan to results for a current scan using a current candidate read level. If the results with the current candidate read level are more favorable, the read scan circuit may calculate a next candidate read level based on the current candidate read level. If the results with the current candidate read level are less favorable, the read scan circuit may calculate a next candidate read level based on one or more prior scans using candidate read levels. In embodiments that determine which candidate read levels to use with successive iterations, a read scan circuit may apply a positive or negative offset to a current read level to determine a next candidate read level.
Notes
Added by DJM 12 2021