6388

Application Calibrating non-volatile memory read thresholds
Matter Number US10998041B1 Reference Case 1 US10998041B1
Created 12/22/21, 12:00 AM Modified 12/22/21, 12:00 AM
Application Number

16869424

Paragraph Number

148

Content

"Candidate read level" refers to a value, setting, configuration, numeric value, offset, or the like for a read level that may provide more accurate sensing of memory cells and/or reading of data from memory cells than a current read level. In certain embodiments, candidate read levels may be predetermined, and may be stored in a repository such as a data structure. In other embodiments, candidate read levels may be predetermined and may be organized into a predefined order which a read scan circuit may be configured to follow in selecting candidate read levels to use in determining a read level to replace a current read level.

Notes

Added by DJM 12 2021