Paragraph 148
Paragraph 148
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
148
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,388
Content
"Candidate read level" refers to a value, setting, configuration, numeric value, offset, or the like for a read level that may provide more accurate sensing of memory cells and/or reading of data from memory cells than a current read level. In certain embodiments, candidate read levels may be predetermined, and may be stored in a repository such as a data structure. In other embodiments, candidate read levels may be predetermined and may be organized into a predefined order which a read scan circuit may be configured to follow in selecting candidate read levels to use in determining a read level to replace a current read level.
Notes
Added by DJM 12 2021