Paragraph 142
Paragraph 142
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
142
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,382
Content
FIG. 6 illustrates example read scan operation(s) 600 on memory cells programmed to one of sixteen possible memory states, e.g., Er-O. A read scan operation may adjust read levels from a default read level to a new read level in order to reduce a number of errors when reading the memory cells.
Notes
Added by DJM 12 2021