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Application Calibrating non-volatile memory read thresholds
Matter Number US10998041B1 Reference Case 1 US10998041B1
Created 12/22/21, 12:00 AM Modified 12/22/21, 12:00 AM
Application Number

16869424

Paragraph Number

142

Content

FIG. 6 illustrates example read scan operation(s) 600 on memory cells programmed to one of sixteen possible memory states, e.g., Er-O. A read scan operation may adjust read levels from a default read level to a new read level in order to reduce a number of errors when reading the memory cells.

Notes

Added by DJM 12 2021