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Paragraph Number

134

A memory cell programmed to store four bits may be in an erased state 402 or one of fifteen programmed states A-O. Each cell threshold voltage distribution curve (within states Er-O) is associated with the erased state or one of the programmed states. Additionally, each threshold voltage distribution curve defines and/or is associated with a distinct threshold voltage range that, in turn, defines, is assigned, or is associated with a distinct one of a plurality of predetermined n-bit binary values. As such, determining what threshold voltage VTH a memory cell has enables the data (i.e., the logic values of the bits) that the memory cell is storing to be determined.

Added by DJM 12 2021