16869424
Paragraph Number133
6373
| Application | Calibrating non-volatile memory read thresholds | ||
|---|---|---|---|
| Matter Number | US10998041B1 | Reference Case 1 | US10998041B1 |
| Created | 12/22/21, 12:00 AM | Modified | 12/22/21, 12:00 AM |
Application Number
Content
Referring now to FIG. 4 and FIG. 5, FIG. 4 illustrates cell threshold voltage distribution curves 400. The illustrated voltage distribution curves are for memory cells programmed to store four bits of data. At a given point in time, each memory cell may be in one of a plurality of memory states (also referred to as data states). The memory states may include an erased state and a plurality of programmed states. The number of programmed states corresponds to the number of bits the memory cells are programmed to store.
Notes
Added by DJM 12 2021