6373

Application Calibrating non-volatile memory read thresholds
Matter Number US10998041B1 Reference Case 1 US10998041B1
Created 12/22/21, 12:00 AM Modified 12/22/21, 12:00 AM
Application Number

16869424

Paragraph Number

133

Content

Referring now to FIG. 4 and FIG. 5, FIG. 4 illustrates cell threshold voltage distribution curves 400. The illustrated voltage distribution curves are for memory cells programmed to store four bits of data. At a given point in time, each memory cell may be in one of a plurality of memory states (also referred to as data states). The memory states may include an erased state and a plurality of programmed states. The number of programmed states corresponds to the number of bits the memory cells are programmed to store.

Notes

Added by DJM 12 2021