Paragraph 133
Paragraph 133
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
133
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,373
Content
Referring now to FIG. 4 and FIG. 5, FIG. 4 illustrates cell threshold voltage distribution curves 400. The illustrated voltage distribution curves are for memory cells programmed to store four bits of data. At a given point in time, each memory cell may be in one of a plurality of memory states (also referred to as data states). The memory states may include an erased state and a plurality of programmed states. The number of programmed states corresponds to the number of bits the memory cells are programmed to store.
Notes
Added by DJM 12 2021