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FIG. 4 illustrates multiple default read levels which may be set at the time a storage device 200 is manufactured and may be tuned during a manufacturing process and/or later when the storage device 200 is in use by a customer. When memory cells are programmed, the threshold voltages are changed from the erased memory state 402 to one of the QLC programmed memory states 404. Each memory state is bounded by a default read level. If a programmed, operational, memory cell does not activate at a default read level, the threshold voltage of the memory cell is above the default read level. The read or sense storage operation is an iterative process. And completing the iterative process, either for reading data or for sensing all memory cells, such as with CVD, identifies each memory cell as a member of one of the erased memory state 402 or QLC programmed memory states 404.

Added by DJM 12 2021