Paragraph 128
Paragraph 128
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
128
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,368
Content
The determined memory state may then be decoded into a representation of the data bits stored by the memory cell. "Read voltage" is a shorthand reference to a "read threshold voltage." "Read level" is another term commonly used to describe a "read voltage" and the two terms are used interchangeably herein. Reading memory cells based on a read level may be used for reading stored data in the memory cells as well as testing/checking performance of the memory cells and determining whether to make any changes to configuration parameters for the memory cells.
Notes
Added by DJM 12 2021