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Paragraph Number126
6366
| Application | Calibrating non-volatile memory read thresholds | ||
|---|---|---|---|
| Matter Number | US10998041B1 | Reference Case 1 | US10998041B1 |
| Created | 12/22/21, 12:00 AM | Modified | 12/22/21, 12:00 AM |
Application Number
Content
"Read level" refers to a voltage level configured to test, check, read, or sense, which memory cells conduct at the voltage level. In certain embodiments, the memory cells may comprise transistors and the read level, or read voltage, is a voltage level at, or above a threshold voltage for the memory cells which causes the memory cell to conduct a current, to activate.
Notes
Added by DJM 12 2021