Paragraph 125
Paragraph 125
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
125
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,365
Content
In FIG. 4, the lowest memory state Er is depicted as a negative threshold voltage below the depicted 0.0V. In other embodiments, the lowest memory state Er may comprise a positive threshold voltage above the 0.0V level, or span the 0.0V level. Values, magnitudes, sizes, and the like of read voltages may vary by manufacturer and type of non-volatile memory cell, each of which are encompassed by this disclosure. A read level is used by the die controller to distinguish memory cells in one memory state from those in another.
Notes
Added by DJM 12 2021