16869424

Paragraph Number

124

The threshold voltage for each memory cell may be encoded to represent binary data. In particular, the threshold voltage for each memory cell may be encoded to represent a 2, 3, 4 or more bits per memory cell. For example in FIG. 4, the binary value "1111" may in one embodiment be associated with the lowest memory state (labeled Er, an erased memory state 402), the value "1110" associated with the next lowest read voltage state and first of the QLC programmed memory states 404 (labeled A), the value "1010" associated with the next highest read voltage state (labeled B), and the value "1000" associated with the next highest read voltage state (labeled C), and so on, with only one bit changing between memory states, also referred to as read voltage states.

Added by DJM 12 2021