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Paragraph Number

117

For example, with NAND memory cells, a threshold voltage (Vt) window may be defined between a negative threshold voltage, or approximately zero threshold voltage, and a maximum threshold voltage. Within this Vt window, a number of sub-ranges may be defined and referred to as memory states. In certain embodiments, the whole Vt window may be divided up such that each threshold voltage falls within one of the memory states. In one embodiment, each memory state has a lower boundary and an upper boundary and may be represented by a cell threshold voltage distribution.

Added by DJM 12 2021