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Dave's PCF WIP: Paragraphs

6354

Application Calibrating non-volatile memory read thresholds
Matter Number US10998041B1 Reference Case 1 US10998041B1
Created 12/22/21, 12:00 AM Modified 12/22/21, 12:00 AM
Application Number

16869424

Paragraph Number

114

Content

FIG. 4 shows a graph of a cell threshold voltage distribution for memory cells of a non-volatile storage media and cell threshold voltage distribution curves 400 such as multi-level NAND flash storage cells, or the like. The memory states, in the depicted embodiment, may be encoded using a gray code encoding model, with binary values for adjacent memory states differing by a single bit in the encoding.

Notes

Added by DJM 12 2021