Paragraph 114
Paragraph 114
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
114
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,354
Content
FIG. 4 shows a graph of a cell threshold voltage distribution for memory cells of a non-volatile storage media and cell threshold voltage distribution curves 400 such as multi-level NAND flash storage cells, or the like. The memory states, in the depicted embodiment, may be encoded using a gray code encoding model, with binary values for adjacent memory states differing by a single bit in the encoding.
Notes
Added by DJM 12 2021