Paragraph 99
Paragraph 99
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
99
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,339
Content
In some implementations, some of the components can be combined. In various designs, one or more of the components (alone or in combination), other than non-volatile memory array 206, can be thought of as at least one control circuit or storage controller which is configured to perform the techniques described herein. For example, a control circuit may include any one of, or a combination of, die controller 204, state machine 214, address decoder 216, column decoder 212, power control 218, sense blocks SB1, SB2, SBp, read/write circuits 208, storage controller 102, and so forth.
Notes
Added by DJM 12 2021