6327

Application Calibrating non-volatile memory read thresholds
Matter Number US10998041B1 Reference Case 1 US10998041B1
Created 12/22/21, 12:00 AM Modified 12/22/21, 12:00 AM
Application Number

16869424

Paragraph Number

87

Content

Word lines may comprise sections of the layers containing memory cells, disposed in layers above the substrate. Multiple word lines may be formed on single layer by means of trenches or other non-conductive isolating features.

Notes

Added by DJM 12 2021