Paragraph 87
Paragraph 87
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
87
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
—
Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,327
Content
Word lines may comprise sections of the layers containing memory cells, disposed in layers above the substrate. Multiple word lines may be formed on single layer by means of trenches or other non-conductive isolating features.
Notes
Added by DJM 12 2021