Paragraph 81
Paragraph 81
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
81
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,321
Content
In one embodiment, a channel within a NAND string creates a conductive path by activating one or more memory cells (e.g., one or more selected memory cells and unselected memory cells) along the NAND string, and one or more control structures (e.g., select gates (source and/or drain) between a source line connected to one end (e.g., the source side) of the NAND string and a sense amplifier or bit line connected to the other end (e.g., the drain side) of the NAND string.
Notes
Added by DJM 12 2021