16869424
Paragraph Number65
6305
| Application | Calibrating non-volatile memory read thresholds | ||
|---|---|---|---|
| Matter Number | US10998041B1 | Reference Case 1 | US10998041B1 |
| Created | 12/22/21, 12:00 AM | Modified | 12/22/21, 12:00 AM |
Therefore, in some embodiments, the storage controller 102 may be configured to write data out-of-place. As used herein, writing data "out-of-place" refers to writing data to different media storage location(s) rather than overwriting the data "in-place" (e.g., overwriting the original physical location of the data). Modifying data out-of-place may avoid write amplification, since existing, valid data on the erase block with the data to be modified need not be erased and recopied. Moreover, writing data out-of-place may remove erasure from the latency path of many storage operations (e.g., the erasure latency is no longer part of the critical path of a write operation). "Storage operation" refers to an operation performed on a memory cell in order to change, or obtain, the value of data represented by a state characteristic of the memory cell. Examples of storage operations include but are not limited to reading data from (or sensing a state of) a memory cell, writing (or programming) data to a memory cell, and/or erasing data stored in a memory cell.
Added by DJM 12 2021