16869424
Paragraph Number63
6303
| Application | Calibrating non-volatile memory read thresholds | ||
|---|---|---|---|
| Matter Number | US10998041B1 | Reference Case 1 | US10998041B1 |
| Created | 12/22/21, 12:00 AM | Modified | 12/22/21, 12:00 AM |
Application Number
Content
The memory die 104 may be partitioned into memory divisions that can be erased as a group (e.g., erase blocks) in order to, inter alia, account for the asymmetric properties of the memory die 104 or the like. As such, modifying a single data segment in-place may involve erasing the entire erase block comprising the data, and rewriting the modified data to the erase block, along with the original, unchanged data. This may result in inefficient write amplification, which may excessively wear the memory die 104.
Notes
Added by DJM 12 2021