Paragraph 42
Paragraph 42
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
42
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,282
Content
In some embodiments, each storage device 200 may include two or more memory dies 104, such as flash memory, nano random-access memory ("nano RAM or NRAM"), magneto-resistive RAM ("MRAM"), dynamic RAM ("DRAM"), phase change RAM ("PRAM"), etc. In further embodiments, the data storage device 200 may include other types of non-volatile and/or volatile data storage, such as dynamic RAM ("DRAM"), static RAM ("SRAM"), magnetic data storage, optical data storage, and/or other data storage technologies.
Notes
Added by DJM 12 2021