Paragraph 39
Paragraph 39
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
39
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,279
Content
Examples of non-volatile memory media include but are not limited to: ReRAM, Memristor memory, programmable metallization cell memory, phase-change memory (PCM, PCME, PRAM, PCRAM, ovonic unified memory, chalcogenide RAM, or C-RAM), NAND FLASH memory (e.g., 2D NAND FLASH memory, 3D NAND FLASH memory), NOR FLASH memory, nano random access memory (nano RAM or NRAM), nanocrystal wire-based memory, silicon-oxide based sub-10 nanometer process memory, graphene memory, Silicon-Oxide-Nitride-Oxide-Silicon (SONOS), programmable metallization cell (PMC), conductive-bridging RAM (CBRAM), magneto-resistive RAM (MRAM), magnetic storage media (e.g., hard disk, tape), optical storage media, or the like.
Notes
Added by DJM 12 2021