Paragraph 36
Paragraph 36
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
36
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,276
Content
Examples of the determinable physical characteristic include, but are not limited to, a threshold voltage for a transistor, an electrical resistance level of a memory cell, a current level through a memory cell, a magnetic pole orientation, a spin-transfer torque, and the like.
Notes
Added by DJM 12 2021