16869424
Paragraph Number24
6264
| Application | Calibrating non-volatile memory read thresholds | ||
|---|---|---|---|
| Matter Number | US10998041B1 | Reference Case 1 | US10998041B1 |
| Created | 12/22/21, 12:00 AM | Modified | 12/22/21, 12:00 AM |
Application Number
Content
The solution disclosed, and claimed, herein uses correlations between memory states to make read scan operations more efficient, more accurate, and faster. As certain memory states shift to higher threshold voltages or to lower threshold voltages or widen or narrow, other memory states may have a correlated pattern of shifting, widening, narrowing, etc. These correlations may be positive correlations or negative correlations.
Notes
Added by DJM 12 2021