Paragraph 4
Paragraph 4
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
4
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,244
Content
This disclosure relates to a method for an improved read scan operation, also referred to as a read level calibration scan. A first read level window, configured to test read levels between two adjacent memory states, is scanned for a first candidate read level that activates the fewest number of memory cells in relation to other candidate read levels within that first read level window. A second read level window for a second candidate read level is then configured based on a correlation between at least one of the two adjacent memory states and one or more other adjacent memory states associated with the second read level window. The second read level window is scanned for a second candidate read level that activates the fewest number of memory cells in relation to other candidate read levels within the second read level window. Finally, a read operation is configured to use the first candidate read level and the second candidate read level.
Notes
Added by DJM 12 2021