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However, with the number of memory cells in a memory die increasing as well as the amount of data stored per cell (TLC, MLC, QLC, PLC), read scan operations may become a time consuming process. Read level calibration may be performed in response to environmental changes (such as temperature fluctuations or high device usage) and may distinguish between narrower and narrower margins between memory states. There is, therefore, a need for faster and more efficient read scan operations.

Added by DJM 12 2021