Paragraph 3
Paragraph 3
Application
Calibrating non-volatile memory read thresholds
Matter Number
US10998041B1
Paragraph Number
3
Application Number
16869424
Reference Case 1
US10998041B1
Reference Case 2
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Created
12/22/21, 12:00 AM
Modified
12/22/21, 12:00 AM
Id
6,243
Content
However, with the number of memory cells in a memory die increasing as well as the amount of data stored per cell (TLC, MLC, QLC, PLC), read scan operations may become a time consuming process. Read level calibration may be performed in response to environmental changes (such as temperature fluctuations or high device usage) and may distinguish between narrower and narrower margins between memory states. There is, therefore, a need for faster and more efficient read scan operations.
Notes
Added by DJM 12 2021