Paragraph 6
Paragraph 6
Matter Number
2380.2.01
Paragraph Number
6
Application Number
11952091
Reference Case 1
2380.2.01
Reference Case 2
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Created
3/16/21, 12:00 AM
Modified
3/16/21, 12:00 AM
Id
2,919
Content
Using write-in-place for solid-state storage can be inefficient because typically writing data often takes much longer than reading data. For flash memory, which is a type of solid-state storage, changing a bit from a “zero” state (“zero”) to a “one” state (“one”) usually takes longer than changing a bit from a one to a zero. This is the case for typical flash memory that uses capacitors as cells where a zero equates to a discharged capacitor in a cell and a one equates to a charged capacitor in a cell. Typically, charging a capacitor takes longer than discharging a capacitor.
Notes
Added by DJM 3 2021