Paragraph 238
Paragraph 238
Matter Number
—
Paragraph Number
238
Application Number
13189402
Reference Case 1
—
Reference Case 2
—
Created
3/12/21, 12:00 AM
Modified
3/12/21, 12:00 AM
Id
2,811
Content
In one embodiment, the write voltage module 416 sets a write voltage level for writing data to the storage cells of the solid-state storage media 110. The write voltage level is a programming voltage that specifies the minimum or maximum voltage used to program or change a state of a storage cell, a step magnitude for an incremental step pulse programming operation, a maximum number of iterations for an incremental step pulse programming operation, a program verify threshold for a program operation, an initial bias for an incremental step pulse programming operation, or the like. In one embodiment, the write voltage module 416 may be integrated with the configuration module 352 and/or the proactive configuration module 424.
Notes
Added by DJM 3 2021