Paragraph 105
Paragraph 105
Matter Number
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Paragraph Number
105
Application Number
13189402
Reference Case 1
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Reference Case 2
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Created
3/12/21, 12:00 AM
Modified
3/12/21, 12:00 AM
Id
2,678
Content
Each of the storage elements 216, 218, 220, in one embodiment, store binary data in a plurality of storage cells that exhibit a bias. Each storage cell stores one or more binary bits, or values. Flash memory storage cells may be single-level cells (“SLC”) that each store a single binary bit, or multi-level cells (“MLC”) that each store two or more binary bits. Examples of storage cells include transistors, capacitors, magnetic elements, mechanical elements, optical elements, and the like. In flash memory, each storage cell is typically a floating-gate transistor. NRAM, MRAM, DRAM, PRAM, and other types of solid-state storage may have other types of storage cells, and may store either a single binary bit or two or more binary bits per storage cell.
Notes
Added by DJM 3 2021