2678

Application Apparatus, system, and method for managing solid-state storage media
Matter Number Reference Case 1
Created 3/12/21, 12:00 AM Modified 3/12/21, 12:00 AM
Application Number

13189402

Paragraph Number

105

Content

Each of the storage elements 216, 218, 220, in one embodiment, store binary data in a plurality of storage cells that exhibit a bias. Each storage cell stores one or more binary bits, or values. Flash memory storage cells may be single-level cells (“SLC”) that each store a single binary bit, or multi-level cells (“MLC”) that each store two or more binary bits. Examples of storage cells include transistors, capacitors, magnetic elements, mechanical elements, optical elements, and the like. In flash memory, each storage cell is typically a floating-gate transistor. NRAM, MRAM, DRAM, PRAM, and other types of solid-state storage may have other types of storage cells, and may store either a single binary bit or two or more binary bits per storage cell.

Notes

Added by DJM 3 2021