13189402
Paragraph Number105
2678
| Application | Apparatus, system, and method for managing solid-state storage media | ||
|---|---|---|---|
| Matter Number | Reference Case 1 | ||
| Created | 3/12/21, 12:00 AM | Modified | 3/12/21, 12:00 AM |
Each of the storage elements 216, 218, 220, in one embodiment, store binary data in a plurality of storage cells that exhibit a bias. Each storage cell stores one or more binary bits, or values. Flash memory storage cells may be single-level cells (“SLC”) that each store a single binary bit, or multi-level cells (“MLC”) that each store two or more binary bits. Examples of storage cells include transistors, capacitors, magnetic elements, mechanical elements, optical elements, and the like. In flash memory, each storage cell is typically a floating-gate transistor. NRAM, MRAM, DRAM, PRAM, and other types of solid-state storage may have other types of storage cells, and may store either a single binary bit or two or more binary bits per storage cell.
Added by DJM 3 2021