13189402

Paragraph Number

41

The system 100 includes at least one solid-state storage device 102. In other embodiments, the system 100 includes two or more solid-state storage devices 102. Each solid-state storage device 102 may include non-volatile, solid-state storage media 110, such as flash memory, nano random access memory (“nano RAM or NRAM”), magneto-resistive RAM (“MRAM”), dynamic RAM (“DRAM”), phase change RAM (“PRAM”), racetrack memory, memristor memory, nanocrystal wire-based memory, silicon-oxide based sub-10 nanometer process memory, graphene memory, silicon-oxide-nitride-oxide-silicon (“SONOS”) memory, resistive random-access memory (“RRAM”), programmable metallization cell (“PMC”), conductive-bridging RAM (“CBRAM”), or the like. The solid-state storage device 102 is described in more detail with respect to FIGS. 2, 3A, and 3B.

Added by DJM 3 2021