Paragraph 41
Paragraph 41
Matter Number
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Paragraph Number
41
Application Number
13189402
Reference Case 1
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Reference Case 2
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Created
3/12/21, 12:00 AM
Modified
3/12/21, 12:00 AM
Id
2,614
Content
The system 100 includes at least one solid-state storage device 102. In other embodiments, the system 100 includes two or more solid-state storage devices 102. Each solid-state storage device 102 may include non-volatile, solid-state storage media 110, such as flash memory, nano random access memory (“nano RAM or NRAM”), magneto-resistive RAM (“MRAM”), dynamic RAM (“DRAM”), phase change RAM (“PRAM”), racetrack memory, memristor memory, nanocrystal wire-based memory, silicon-oxide based sub-10 nanometer process memory, graphene memory, silicon-oxide-nitride-oxide-silicon (“SONOS”) memory, resistive random-access memory (“RRAM”), programmable metallization cell (“PMC”), conductive-bridging RAM (“CBRAM”), or the like. The solid-state storage device 102 is described in more detail with respect to FIGS. 2, 3A, and 3B.
Notes
Added by DJM 3 2021