Paragraph 5
Paragraph 5
Matter Number
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Paragraph Number
5
Application Number
13189402
Reference Case 1
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Reference Case 2
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Created
3/12/21, 12:00 AM
Modified
3/12/21, 12:00 AM
Id
2,578
Content
Many solid-state storage devices distinguish between different binary values that a storage cell may store based on a read voltage level of the storage cell, based on a resistivity of the storage cell, or based on another configuration parameter of the storage cell. Solid-state storage devices may use one or more read voltage thresholds, resistivity thresholds, or the like to separate discrete values that may be stored in a storage cell.
Notes
Added by DJM 3 2021