16455676

Paragraph Number

61

The method also includes forming an isolation/passivation layer over each of the plurality of semiconductor die. The isolation layer is formed over the first side and the sidewalls of each of the plurality of semiconductor die. In various implementations, the isolation layer may extend to the one or more dams between the semiconductor die and the optically transmissive substrate. In some implementations, the isolation layer may include, by non-limiting example, aluminum oxide, silicon dioxide, silicon nitride, aluminum nitride, and other dielectric materials. Referring to FIG. 13, each of the plurality of semiconductor die are illustrated after formation of the isolation layer.

Added by DJM 3 2021