16455676

Paragraph Number

60

The method of forming semiconductor packages without TSVs also includes singulating the semiconductor die and a metal layer 56 remaining after etching the semiconductor wafer. Referring to FIG. 10, the layer of oxide and metal layers is labeled element 56. Referring to FIG. 11, the plurality of die is illustrated after singulation of those layers. Singulating through the semiconductor die and metal layer exposes inner terminals 58 of the first RDL 32 on the optically permissive substrate 24. In various implementations, one or more inner terminals may be exposed after singulating. Singulation may be performed through laser cutting, sawing, etching, or other methods capable of severing semiconductor material and metal layers. Referring to FIG. 12, an enlarged view of the inner terminals 58 of the first RDL 32 is illustrated after singulation of the metal layers.

Added by DJM 3 2021