16455676
Paragraph Number58
2522
| Application | Electrical Interconnection of Image Sensor package | ||
|---|---|---|---|
| Matter Number | ONSO3305US - Onsemi346 | Reference Case 1 | ONSO3305US - Onsemi346 |
| Created | 3/3/21, 12:00 AM | Modified | 3/3/21, 12:00 AM |
Application Number
Content
The method also includes thinning the semiconductor wafer 36 on the first side 38 of the semiconductor wafer. In various implementations, the wafer may be thinned through, by non-limiting example, mechanical grinding, chemical mechanical polishing (CMP), wet etching, atmospheric downstream plasma (ADP), dry chemical etching (DCE), or other methods of decreasing the thickness of a semiconductor wafer. Referring to FIG. 9, the semiconductor wafer 36 coupled to the optically transmissive substrate 24 after thinning of the semiconductor wafer is illustrated.
Notes
Added by DJM 3 2021