Paragraph 58
Paragraph 58
Matter Number
ONSO3305US - Onsemi346
Paragraph Number
58
Application Number
16455676
Reference Case 1
ONSO3305US - Onsemi346
Reference Case 2
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Created
3/3/21, 12:00 AM
Modified
3/3/21, 12:00 AM
Id
2,522
Content
The method also includes thinning the semiconductor wafer 36 on the first side 38 of the semiconductor wafer. In various implementations, the wafer may be thinned through, by non-limiting example, mechanical grinding, chemical mechanical polishing (CMP), wet etching, atmospheric downstream plasma (ADP), dry chemical etching (DCE), or other methods of decreasing the thickness of a semiconductor wafer. Referring to FIG. 9, the semiconductor wafer 36 coupled to the optically transmissive substrate 24 after thinning of the semiconductor wafer is illustrated.
Notes
Added by DJM 3 2021