Paragraph 24

Paragraph 24

Application: ONSO3305US - Onsemi346

Matter Number ONSO3305US - Onsemi346
Paragraph Number 24
Application Number 16455676
Reference Case 1 ONSO3305US - Onsemi346
Reference Case 2
Created 3/3/21, 12:00 AM
Modified 3/3/21, 12:00 AM
Id 2,488
Content
The one or more sidewalls of the semiconductor die may be angled between 85 degrees and 60 degrees from a plane formed by the first side of the semiconductor die after etching.
Notes Added by DJM 3 2021